ISSN 1002-1027  CN 11-2952/G2

Acta scientiarum naturalium Universitatis Pekinensis

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The Improvement of Extractive Emission in InGaAlP Quantum Wells Light Emitting Diodes by Microstructures

SUI Wenhui1, ZHANG Bei1, WANG Dajun1, LUAN Feng1, XU Wanjin1, MA Xiaoyu2   

  1. 1School of Physics, Peking University, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Beijing, 100871;2Institute of Semiconductors, The Chinese Academy of Science, Beijing, 100083
  • Received:2002-04-15 Online:2003-05-20 Published:2003-05-20

Abstract: To solve the problem of low extractive efficiency in semiconductor light emitting diodes(LED), a proposal of introducing microstructures onto the top of LED was presented. Based on this idea, the InGaAlP quantum wells LEDs with centric ring-grooves microstructures have been successfully prepared by the conventional micro-fabrication. As a result, the vertical extractive light intensity from the novel LED was obviously stronger than that of the LED without microstructures. This success provides a new method for improving extraction efficiency from LED.