ISSN 1002-1027  CN 11-2952/G2

Acta scientiarum naturalium Universitatis Pekinensis

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Nucleation and Growth Mechanism of the GaN Nanowires

JIA Shengguo, YU Dapeng   

  1. State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871
  • Received:2002-04-16 Online:2003-05-20 Published:2003-05-20

Abstract: GaN material is one of the most attractive semiconductor materials. It is reported that the latest research results in the nucleation and growth mechanism of the GaN nanowires, which is grown by CVD method. Emphasis was paid on the effect of growth temperature and catalyst. Through analysis of the morphologies, microstructures, and their dependence on the growth temperature and catalyst, a clear understanding on the growth of the GaN nanowires is figured out, which is the key for a controlled growth of high quality GaN nanowires and can be used for nanodevices.