ISSN 1002-1027  CN 11-2952/G2

Acta scientiarum naturalium Universitatis Pekinensis

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Design of a 3.1-10.6GHz Ultra Wideband Low Noise Amplifier

SONG Ruifeng, LIAO Huailin, HUANG Ru, WANG Yangyuan   

  • Received:2006-02-22 Online:2007-01-20 Published:2007-01-20

Abstract: A 3.1-10.6GHz ultra wideband LNA was designed using standard 0.35μm SiGe HBT process. The simulation result shows that, with careful selection of circuits structure and device parameters, it is possible to fabricate a UWB LNA using standard 0.35μm SiGe HBT process. In the designed band, the S11and S22 of the designed LNA is better than -8dB, and the S21 is about 11dB with supply voltage of 2.5V and draws a current of 4.38mA, and the noise figure of the LNA is 3.5dB.